| 摘要 |
The invention relates to a process for producing resist structures based on negative resists by means of shortwave UV radiation, the object being the development of a process of this type in such a way that resist structures having steep flanks, coupled with high contrast and good wet and dry etching resistance, can be produced. For this purpose, the invention provides the use of copolymers or terpolymers of the following structure as the resist material: <IMAGE> where n + m = 1, and the radicals R, X, Y and Z are defined as follows: R = H, halogen (F, Cl, Br, I), -CH2-halogen or -CH2-CH2-halogen (the radicals R being identical or different); X = H, CH3 or C2H5; Y = H, Cl or Br, it being possible for the radicals Y to be identical or different; and Z = O or S. The process according to the invention is particularly suitable for producing resist structures on profiled wafers.
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