| 摘要 |
PURPOSE:To change the electron ray sensitivity of a deposited film continuously in the film thickness direction by successively altering high-frequency output or the degree of vacuum or the composition of a high molecular monomer gas and varying the composition or the degree of vacuum in the thickness direction of the resist film deposited. CONSTITUTION:Ar 301 is activated by means of a high frequency device 302, and transported to an exhaust system 306. The composition ratio of the prepolymers, polymerization degrees thereof differ, or different monomers 303, 304 is adjusted, they are flowed 308 with Ar in countercurrent shape, polymerization is started and they are deposited onto a sample 307. The property of the resist film deposited also changes by the flow rate of the gas or the degree of vacuum, but the adjustment of the polymerization degrees by high-frequency power is the easiest, and sensitivity can be adjusted by one figure or higher. According to such constitution, the shape of the end section of a resist pattern can freely be altered even when the condition of electron ray irradiation is left as it is constant because the sensitivity can freely be varied in the resist film thickness direction, and a desired film composition can be obtained through simple programme control. |
