| 摘要 |
<p>PURPOSE:To perform the operation speed of the entitled device at high speed by selecting whether the drain of a cell storing more data out of the data stored in memory cells along the same row is to be connected or not to the row, so as to reduce the capacity of the row. CONSTITUTION:When there is a relation of C1>C2 where C1 is the sum of the connection capacity between the drains of each memory cell MC6 and a semiconductor base element forming the MC6 and the capacity between the drain of each MC6 and the gates and C2 is the capacity between the drains of each MC6 and a row line 5, the drain of the MC6 storing less data out of the binary data stored in the MCs 6 arrayed along the same row line is connected to the row line 5. When C1<C2, the drain of the MC6 storing the said less data is connected to the row line 5.</p> |
