| 摘要 |
PURPOSE:To reduce a leakage current of a semiconductor device due to a light produced at a P-N junction by forming a light shielding means on a semiconductor region formed with a P-N junction and largely reducing or shielding a light incident to the P-N junction. CONSTITUTION:N<+> type drain and source regions 211, 212 are diffused and formed in a P type semiconductor substrate 24, and a gate electrode 28 made of polycrystalline Si is covered through a gate SiO2 film 27 on a channel region disposed between the drain and source regions. Subsequently, a field SiO2 film 29 is formed around the regions 211, 212, and a groove 30 which surrounds the three sides of the regions 211, 212 and reaches at the end the surface of the substrate 24 is formed at the film 29. Thereafter, an SiO2 film 25 is accumulated on the surface of the substrate 24 except the groove 30, and an insulating layer 26 containing P is accumulated in the prescribed thickness in the groove 30 and on the surface of the film 25. In this manner, a new groove 31 which does not reach the surface of the substrate 24 at the end of the film 26 is formed, and aluminum conductive layers 231, 232 which cover the P-N junction through contacting holes 221, 222 are respectively covered on the regions 211, 212 while burying the groove 30. |
