| 摘要 |
PURPOSE:To obtain a seam weld sealing type device, from a cap circumferential section thereof rust and discoloration are hardly generated, by plating both surfaces of a metallic thin plate with the first metallic layer at first, forming the thin plate in a metallic cap through press work and plating the thin plate with the second metallic layer when manufacturing the metallic cap with a concave section functioning as a positioning section. CONSTITUTION:The first metallic layer 25 necessary for seam weld sealing is formed onto the surface of the metallic thin plate 21 through nickel plating, and the metallic cap with the concave section as a single body is shaped through press work. The back of the thin plate 21 is coated with the second metallic layer 25' through nickel plating by using a barrel plating method. When seam weld sealing is conducted by using such a metallic cap, rust, discoloration, etc. are not generated in the cap even when the semiconductor device is entered into a severe environment and tested. |
