| 摘要 |
PURPOSE:To obtain an electrode connecting structure having large bonding strength in a semiconductor device having a structure is which at least two electrode metals are connected by interposing eutectic alloy layer of silver and copper formed by welding at the connecting portion. CONSTITUTION:The structure of the lead terminal of a hybrid integrated circuit device and the connecting structure of the lead terminal to a film circuit substrate are formed as follows: Metallized silver palladium terminal electrodes 2 are formed in the prescribed pattern shape on an insulating substrate 1 made of ceramic or the like, and lead terminals 3 are connected to the electrodes 3. In this structure, the center conductor of the terminal 3 is formed of an iron material 30, a copper layer 31 is convered by plating on the surface, and a silver layer 32 is similarly laminated by plating on the layer 31. The layers 31, 32 are formed on the back surface of the material 30 of the side contacted with the electrodes 2, and a silver-copper alloy layer 33 alloyed with silver in the electrode 2 is formed at the welded part 33. In this manner, its cost can be reduced, and a terminal connection having large mechanical strength can be obtained. |
