| 摘要 |
PURPOSE:To prevent the deterioration of the characteristics of a semiconductor laser element due to irregular segregation of impurity by doping impurities of the same type in an active layer and a crystalline layer bonded to the active layer at the substrate side. CONSTITUTION:An n type clad layer 2' is produced by a liquid phase epitaxial growth method on an n type GaAs substrate 1, and an active layer 3' doped with the same impurity as the layer 2' is accumulated on the layer 2'. When the impurity constitution is thus set, even if the impurity from the layer 2' is mixed to the layer 3', the irregularity can be eliminated. Subsequently, a p type clad layer 4 and an n type cap layer 5 are sequentially laminated on the layer 3', and a p type diffused layer 6 is formed in the layer 5, thereby forming a current passage. |
