| 摘要 |
PURPOSE:To improve the reliablility of the semiconductor device by coating a wafer with a decompression CVD-PSG film having few particles, which exfoliate from the pipe wall of the device and adhere, and the laminate of a plasma nitride film having a strong protective effect. CONSTITUTION:A decompresion CVD device holds 5 vertically the wafers 1 in a core pipe 4 made of quartz and grows the wafers. Accordingly, the particles exfoliating and falling from the pipe wall are difficult to adhere on grown films, the reaction pipe can cleanly be washed because it is made of quartz, and the formation of an incomplete PSG film can be avoided. The thickness of the decompression CVD films is formed by approximately 1-3mu and the plasma nitride films are laminated by approximately 0.5-1.5mu because a protective effect is insufficient when thickness is 1mu or thinner. According to such constitution, the device can be protected approximately completely from the intrusion of pollution from the outside, and the reliability of the semiconductor device is improved remarkably. |
