| 摘要 |
PURPOSE:To fine an element without considering positioning and accuracy by forming an opening section for shaping an element isolating region and an opening section for forming the element through the same photo-etching process while shaping an isolating region through an ion implantation method and molding an element region. CONSTITUTION:An N<+> type buried layer 22 is diffused and formed to a P type semiconductor substrate 21, an N type layer 23 is grown to the whole surface containing the layer 22 in epitaxial shape, an insulating layer 24 is shaped to the whole surface, and opening sections 25-27 for forming the isolating region, for a collector region extracting region and for forming a base region are each bored. The insides of these opening sections 25-27 are coated with thin insulating layers 28, the opening sections 26, 27 are coated with a resist film 29, and opening sections 30 having sizes larger than the film 29 are shaped to the opening sections 25 positioned at the both sides. P type regions 31 are formed into the layer 23 through ion implantation and used as diffusion sources for shaping the isolating region, and the P type isolating regions 32 are molded through heat treatment. The resist film 29 is replaced with new one according to a normal method, a P type ion implantation region 34 is formed into the layer 23, and a P type base region, etc. are shaped through heat treatment. |
