| 摘要 |
PURPOSE:To remove residue, and to obtain a smooth epitaxial grown surface by laminating last Pb1-xSnxTe, keeping a slide and a supporting base at a crystalline temperature or lower and contacting the slide and the supporting base with the Pb or PbTe of a liquid phase in another reservoir. CONSTITUTION:A substrate 12 made of PbTe and a dummy plate 13 are contained in the supporting base K made of carbon, Pb1-xSnxTe is each received in the reservoirs 15-17 of the slide while making Sn concentration differ, a reservoir 18 is emptied, and Pb 23 is received in the reservoir 19. A device is inserted into a quartz pipe in a H2 atmosphere, and heated at 600 deg.C, and the materials of each reservoir are melted. Three layers having different x values are formed in epitaxial shape in the same manner as conventional devices, and the melted residue of the surface is shaven off by the corner of the bottom B of the empty reservoir 18. An oven is rapidly cooled to 500 deg.C, the liquid phase Pb 23 in the reservoir 19 is contacted with the substrate 12, and a member 14 is left slid. Since the temperature of the liquid phase Pb is 500 deg.C and its viscosity is high at that time, the melted residue of Pb1-xSnxTe on the substrate is wrapped by Pb and easily wiped out, Pb does not adhere on the surface, and the flat surface is shaped. |
