| 摘要 |
PURPOSE:To prevent the breaking of a wiring film at stages, and to improve yield by a method wherein a semiconductor substrate is coated with an insulating film, a predetermined opening is bored, a metallic film is evaporated from the vertical direction of the opening, the metallic film coated onto the insulating film is removed, and the wiring film contacting with the metallic film in the opening is evaporated onto the whole surface. CONSTITUTION:The SiO2 film 32 functioning as a layer insulating film is deposited onto the semiconductor substrate 31 through a CVD method, and the opening is bored through reactive ion etching using a mixed gas consisting of CF4 and H2. The device is arranged so that the substrate 31 and evaporating particles from the target of a sputtering device are vertically positioned, and the Al film 33 is evaporated. Accordingly, the inside of the opening and the Al film 33 coated onto the film 32 around the opening are intercepted, and the whole surface is coated with the photo-resist film 34. The film 34 and the film 33 on the film 32 are removed through reactive ion etching by using the mixed gas of CCl4 and Cl2, and the film 34 remaining in a surface layer section in the opening is removed through O2 plasma etching. The whole surface is coated with an Al film 35 while the film 35 is contacted with the film 33 remaining in the opening. |
