发明名称 BONDING METHOD FOR METALLIC SMALL WIRE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce cost by forming a gold sphere at the tip of a copper wire and bonding the tip of the copper wire to the surface to be bonded through the gold sphere. CONSTITUTION:When a capillary 11 is dropped while the tip 12' of the copper wire 12 is left as it is projected from th nose of the capillary and the tip is immersed in melted gold 13 in a vessel 14 and pulled up, gold adheres on the tip 12'. When the tip 12' is heated by a hydrogen flame 15, the gold sphere n is formed at the tip of the copper wire 12. The tip is bonded through the same process as the conventional bonding of gold wires. In this case, the gold sphere n need not be a true sphere, and may be lumpy in an extent that can be bonded, and the heating of a torch, etc. can be omitted as necessary. According to this constitution, since a steel wire is bonded in the same manner as the gold wire through the utilization of the gold sphere, the bonding of high reliability can be conducted, and the material cost can be reduced.
申请公布号 JPS57157533(A) 申请公布日期 1982.09.29
申请号 JP19810042685 申请日期 1981.03.23
申请人 SHIN NIPPON DENKI KK 发明人 ITOU NAOMICHI
分类号 H01L21/60 主分类号 H01L21/60
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