| 摘要 |
PURPOSE:To effectively perform a heat dissipation of a semiconductor device by projecting an electrode formed on an active region of a semiconductor element, surrounding the electrode with a hermetically sealing ceramic insulator frame, bridging a thin metallic film between a cover coated on the frame and the electrode and filling conductive epoxy resin therein. CONSTITUTION:An FET element 101 formed of GaAs is secured onto an oxygen free copper substrate 102 operating also as a heat sink, and the periphery of the element 101 is surrounded by a ceramic insulator frame 103 having metallized layers 105A, 105B on the surface. Then, the electrodes formed at the element 101 and the metallized layes are respectively connected to lead wires 104A, 104B, hermetically sealing ceramic insulator frame 106 is secured onto the frame 103, and a thin metallic film 110 is bridged over metallic plating electrode 109 on the element 101 from the stepped part formed on the inner wall of the frame. Thereafter, a conductive epoxy resin 111 is filled on the film 110, a cover 107 is coated thereon, and a heat sink 113 through which a stud 112 is passed is secured onto the cover. |
