| 摘要 |
PURPOSE:To obtain a photoreceptor free from rise of residual potential, superior in repetition characteristics even in high and low temperatures, and high in abrasion resistance, by vapor depositing an Se-Te-X (X being halogen) and an Se-Te- X-As-S layer on a conductive substrate in due order. CONSTITUTION:A layer 2 containing 6-15wt% Te basing on Se, and 10- 500ppm X basing on Se-Te is formed on a conductive substrate 1 in 15-95mum thickness by a vapor deposition method. An Se-Te-X-As-S layer 3 is formed in 5-10mum thickness by vapor depositing on the layer 2, Se-Te-X as well as As-S (containing 40-60wt% S basing on As) in an amount of 0.05-5wt% basing on Se-Te-X, thus permitting Se to be sensitized by adding Te, rise of residual potential to be suppressed by adding X, drop of surface potential at high temperature to be prevented by adding As-S, and a photoreceptor high in sensitivity and quality, and enhanced in resistance to moisture and abrasion to be obtained. |
