| 摘要 |
PURPOSE:To obtain an optical exposure mask high in resolution and sensitivity and precision, by laminating a silicon layer and a metal layer for forming silicide resulting from reaction with silicon on a transparent substrate, and forming a silicide pattern by irradiating electron beams. CONSTITUTION:A silicon layer 102 is vapor deposided on a glass substrate 101 in about 50nm thickness, and then a layer of metal 103, such as Pt, Mg, or Ni, reacting with silicon to form a silicide, such as Pt2Si or PtSi is formed. Electron beams are projected from above the layer 103 to form a pattern of a silicide layer 104 on the incident region. The Pt layer 103 is etched away with aqua regia, and the silicon layer 102 is etched away with a mixture of glacial acetic acid-nitric acid-hydrofuoric acid, leaving the layer 104 as a completed mask, thus permitting a micropattern not to be enlarged in size by the approach effect caused by using a resist, a high precision mask to be obtained. |
