Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes

摘要

In an exemplary embodiment, a first polysilicon layer is provided with a SiO2 mask, and the first polysilicon layer is etched away under the SiO2 mask to produce SiO2 overhangs of a lateral extent corresponding to about twice the edge position error (+/-s). Then when second polysilicon layers are produced by means of chemical vapor deposition (CVD), to occupy the cavities under the SiO2 overhangs, the desired nonoverlapping poly-Si-2 electrodes result after definition of those poly-Si-2 electrodes by known lithographical techniques.