| 摘要 |
PURPOSE:To form an SiC film on a metal substrate surface, in which SiC film the adhesion is excellent, and a crack or peeling would hardly occur, by depositing an Si film on the metal substrate surface and then SiC film thereon. CONSTITUTION:A metal substrate such as a die 1 or the like is placed on an electrode 2 housed in a vacuum chamber 7. While the temperature in the chamber 7 is elevated, vacuum is applied in the chamber 7, and then Ar or the like is introduced into the chamber 7. A negative voltage is energized to the electrode 2 to generate glow discharge to etch the surface of the die 1. Then SiH4 and H2 are introduced, and a negative voltage is energized to generate glow discharge to carry out the reaction thereby forming an Si film on the surface of the die 1. C2H2 and SiH4 are allowed to flow into the chamber while the ratio thereof is adjusted to carry out the reaction so that an SiC film is deposited on the Si film. According to this process, the adhesive force between the metal substrate and the Si film and that of the Si film and the SiC film are enhanced, and therefore, as a whole, a film SiC film is formed on the substrate surface. |
