| 摘要 |
PURPOSE:To obtain a semiconductor device having a low-resistant and stable electrode or wiring, by using a metal compound with high melting point and low resistance such as TiN. CONSTITUTION:A field oxide film 2 and gate insulating oxide film 3 are formed on a p type silicon substrate 1, and a nitride titanium (TiN) film is attached over the whole surface by sputtering to pattern it for the formation of a nitride titanium gate electrode 4 and nitride titanium wiring 4a. Thereafter, impurity ion is implanted into an active region to from an ion injected layer 13 with a phosphorous silicate glass film 5 adhered to form a source region 6 and drain region 7 by heat treatment. Next, contact holes 8, 9, 10 are formed for the formation of aluminium electrodes 12a, 12b, 12c. Thus, a MOSFET having a gate electrode stable to heat treatment, is formed. |
