| 摘要 |
PURPOSE:To obtain high pressure-resistant characteristic, by providing an electrode contacting with a guard region and extended on an insulating film on the opposite side of a base region with the interval between electrodes coated with a nitride film in a planar transistor having a plurality of guard regions. CONSTITUTION:A planar transistor is constituted of an N<+> type collector contact region 20, collector region 21 formed of an N type epitaxial layer, P type base region 22, N<+> type emitter region 23 and a plurality of P type guard regions 24 surrounding the base region 22. A field electrode 30 ohmically contacting with the guard region 24 and extended on the SiO2 film 29 on the opposite side of the base region 22 is connected to the guard region. Further, the interval between the field electrodes 30 is adhered with the attachment of an Si3N4 film by plasma CVD method. Thus, the field electrode 30 promotes spreading of a depletion layer, and the attachment 32 restrains the discharge between the electrodes 30. Therefore, elements are enhanced in pressure-resistance. |
