| 摘要 |
PURPOSE:To produce Schottky barrier gate FET of high frequency and high speed processing device (MES FET) by reducing parasitic resistance. CONSTITUTION:An n type GaAs film 2 is formed on a semi-insulation type substrate of GaAs 1 and insulating film 3 of SiO2 or the like and an aluminium film 4 are further deposited on the former film respectively. Next, a bigger opening are made on the aluminum film 4 by side etching technique using a masking material 6 such as photoresist, etc. having an opening at a position for the gate 5 and then an opening is also made on the insulating film 3 by dry etching. After the masking material 6 is stripped, a film of heat resisting metal 7 is deposited. Then, the aluminum film 4 is removed and the gate of heat resisting metal 8 is formed by lift-off technique, and, using this as a mask, a carrier layer 9 of high density is produced by etching the insulating film 3 and by silicon ion implantation. After this, the source 10 and drain 11 electrodes are formed, and a MES FET is completed. |
