MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a high-dielectric strength element by a method wherein anisotropic dry etching is applied to a polycrystal semiconductor film coated and covered on an oxide-resistance mask pattern on a substrate and only the edge part of the mask pattern is left to form channel cut regions. CONSTITUTION:An Si3N4 film 12 is formed in patterning on a P type substrate 11 coated and covered by an insulating film 11. A block oxide film 13 and a polycrystalline Si film 14 are consecutively stacked and formed on the Si3N4 film 12. Only the polycrystalline Si film located on the Si3N4 film 12 is removed by RIPE-type dry etching. Ion implantation is applied to high-concentration boron B<+> through the block oxide film 13 to form channel cut p<+> region 15. After applying the removal of etching to the polycrystalline Si film 14 and the block oxide film 13, a thick field oxide film 8 is formed. In this way, a high- dielectric strength element can easily be formed.