| 摘要 |
PURPOSE:To obtain an electronic devie of compound semiconductor regardless of substrate material by forming a thin film of compound semiconductor through a crystal film of Ge or Si on an amorphous substance. CONSTITUTION:Ge film 2 is formed on SiO2 substrate 1. Subsequently, the crystal particle diameter of Ge film 2 is increased through irradiation of ruby laser and then GaAs film 3 is grown. However, Si2N4 or soda glass or the like is used for an amorphous substance except SiO2, and the material containing the both components of Si and Ge can be used for a crystalline film formed on the amorphous substance. |
