| 摘要 |
PURPOSE:To permit hydrogen or fluorine to exist thermally in amorphous and crystalline structure of Si or Ge by adding carbon to mixed gas. CONSTITUTION:A substrate 1 of SiO2 to stick a silicon film of amorphous or crystalline structure thereto is placed on under electrode 2 and is heated by a heater 3. A hole of diameter of several mm. is provided in upper electrode 4, the mixed gas of SiH, H2, C2H4 having a predetermined composition is supplied through a gas mixer 5 to a reaction chamber 6 and a glow discharge is caused to be occurred between upper electrode 6 and the under electrode 2 by a high frequency power supply 7. The atomic density of C in the Si film is set appropriately at 0.5-5% and the hydrogen density in the film decreases in the density level higher than that. The Si or Ge film containing hydrogen or fluorine together with carbon can surpress come-off of the hydrogen or fluorine even during the heat treatment, and consequently the manufacture of the film can be established at the temperature higher than the conventional. |
