| 摘要 |
PURPOSE:To obtain an etching agent having excellent selectivity for non-electrical Ni film, by making the specified compound to coexist in the etching agent composed of an acid, hydrogen peroxide and free chlorine ion. CONSTITUTION:It is an etching agent which can suppress possibly the corrosion of copper pattern and dissolves and removes only non-electrolytic Ni film selectively. According to its formulation the etching agent which contains 0.1-50wt% of an acid selected among sulfuric acid, nitric acid or phosphoric acid, 0.1- 50wt% of hydrogen peroxide and NaCl, HCl etc. corresponding to 2-20,000ppm as free chlorine ion is made contain tertiary amine, a compound containing polyoxyalkylene radical, the compound selected among the group composed of polyvinyl alcohol, polyvinyl ether, polyvinyl pyrrolidone and pyrrole at the concentration more than 0.5g/l . The corrosion of copper being suppressed strongly by using this etching agent at the temperature 5-60 deg.C, only the non-electrolytic Ni film is etched selectively. |
