| 摘要 |
PURPOSE:To inhibit the increase of leakage currents by compounding the metallic salt of an organic acid containing no halogen compound when using a condensation type silicon rubber containing no alkali metallic impurity. CONSTITUTION:The exposed surface of the P-N junction section J of a semiconductor element is coated with silicon resin 4. A mixture consisting of (a) organopolysiloxane having hydroxyl groups, (b) diorganopolysiloxane, one molecule thereof has at least three or more alkoxy groups, and (c) the metallic salt of the organic acid containing the halogen compound substantially is used as the resin 4 at that time. Accordingly, the increase of leakage currents is inhibited even when the device is exposed at a high temperature. |
