| 摘要 |
PURPOSE:To avoid the decline of the mutual conductance on the high frequency band by a method wherein a gate electrode with an inverse trapezoidal type section which is a low resistant short gate is provided. CONSTITUTION:The source electrode 24 and the drain electrode 25 are formed on the surface comprising a high resistant GaAs layer 22 and a n type GaAs conductive layer 23 formed on a semi-insulating GaAs substrate 21. The the overall surface including said electrodes 24 and 25 is covered with a Si3N4 film 26 and a photoresist film 27 as an opening comprising the formed gate electrode is formed on the surface of said film 26. Then said film 26 is removed by etching making use of the said film 27 as a mask until the film 23 is exposed. After removing the film 27, Al as a Schottky metal is selectively formed on the opening of the film 26. Consequently, an inverse trapezoidal type gate electrode 28 with the gate length of 0.5mum is formed reducing the gate resistance down the 1/3 of the conventional one. |
