发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To obtain the excellent performances such as the stable basic transverse mode oscillating performance, the isotropic image by a method wherein the active layer, the clad layer and the photo waveguide layer are formed on the substrate provided with the twin mesa separated from each other by a narrow groove. CONSTITUTION:The clad layer 2, the waveguide layer 3, the carrier closing layer 4 and the active layer 5 are formed on the substrate 1' provided with the twin mesa separated from each other by a narrow groove. Then the carrier closing layer 6, the waveguide layer 7, the clad layer 8, the GaAs layer 9 and the SiO2 film 10 are further formed. On the other hand, the clad layer 2 must be thinned to make the traverse mode control stable while the active layer 5 must be thinned at the same time to make the perpendicular mode spread larger, however said layers 2 and 5 may be easily thinned by forming each layer of 2-12 making use of the multilayer epitaxial growth comprising the separate confinement structure.
申请公布号 JPS57154883(A) 申请公布日期 1982.09.24
申请号 JP19810039485 申请日期 1981.03.20
申请人 TOKYO SHIBAURA DENKI KK 发明人 OKAJIMA MASASUE;MOGI NAOTO;KURIHARA HARUKI
分类号 H01S5/00;H01S5/223;H01S5/24 主分类号 H01S5/00
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