| 摘要 |
PURPOSE:To prevent exfoliation in the interfaces among a nickel layer and other layers by successively forming the nickel layer and a silver layer through a drive process from the back side and using nickel containing phosphorus as a material for forming the nickel layer. CONSTITUTION:A surface layer obtained by oxidizing the back of a semiconductor wafer 1 through sputtering etching is removed, and the nickel layer 2 is deposited through sputtering while using nickel containing phosphorus as the material. The nickel layer 2 is etched through sputtering and the silver layer 3 is further deposited through sputtering, the whole is sintered in a nitrogen gas atmosphere by a sintering oven, an ohmic contact between the back of the semicondutor wafer 1 and the nickel layer and further an ohmic contact between the nickel layer 2 and the silver layer 3 are acquired, and the formation of the rear face electrode is completed. |
