| 摘要 |
PURPOSE:To prevent disconnection by using a low resistor buried to the surface of a semi-insulating substrate in place of the metallic wiring of the first layer, forming no difference in stages to the surface and disposing the second layer to the flat surface while interposing an insulating film. CONSTITUTION:An N<+> GaAs layer 20 is shaped to the semi-insulating substrate 11 through ion implantation and annealing. The layer 20 is 10mum long and 5mum wide. AuGe alloys 23, 24 are formed, a TiAu alloy film 22 with 0.5mum thickness is shaped, and ohmic connection is formed. The second wiring layer 21 is shaped through the SiO2 13 with 0.5mum thickness. According to this constitution, the second wiring 21 is not disconnected because it is formed onto the flat surface. Wiring resistance by the N<+> layer 20 increases to some extent, but a time constant is reduced because load capacity is small in the practical GaAs IC, and the increase has hardly effect on the working speed of the IC. |
