| 摘要 |
<p>PURPOSE:To obtain a lumpy cluster laminate by filling a bomb, which is connected to a reactor for growing the semi-amorphous semiconductor having crystalline structure, with a gassy impurity acquired by adding a trivalent or pentavalent impurity gas to a silicide gas or a germanide gas diluted with H2 or He. CONSTITUTION:A quartz boat 14 to which a plurality of substrates 15 are erected is received in an activating chamber 27 in a reaction pipe 1 surrounded by a resistance heating oven 6 and electrodes 2, 3 connected to a high-frequency power supply 4. The bombs 7-9 are connected to the gas introducing port of the reaction pipe 1 through valves 19-21 and flowmeters 16-18, and a rotary pump 12 is connected to a discharge port through valves 10, 11. In this constitution, 0.1-20mol% silane or germane diluted with H2 or He gas is enclosed into the bomb 7 and 5-0.05mol% diborane in addition to said silane or germane into the bomb 8, and the bomb 9 is filled with 5-0.05mol% phosphine or arsine besides silane or germane diluted.</p> |
