| 摘要 |
PURPOSE:To obtain the detecting element suitable for detecting low concentration gas such as Freon gas, by forming sensitive body by a metal oxide semiconductor including a catalyst wherein V, V-Mo, and the like are supported by a support comprising Al2O3, SiO2, and the like. CONSTITUTION:The gas sensitive body is formed by the metal oxide semiconductor including the catalyst wherein V, V-Mo, V-W, or V-Mo-W are supported by the support comprising Al2O3, SiO2 or SiO2-Al2O3. The rate of inclusion of this catalyst to the metal oxide semiconductor is specified in the range of 0.1- 20wt%, preferably 0.5-15wt%. A pair of electrodes 2 are provided on the outer surface of a tubular insulating substrate 1. Said metal oxide semiconductor 3 is formed so as to coat the substrate 1 and the electrodes 2. Thus the sensitive body is constituted. In this way, the detecting element, which has excellent sensitivity against Freon gas and the like used as refrigerant and is suitable for detecting the low concentration gas can be obtained. |
