| 摘要 |
PURPOSE:To prevent a switching break-down for GTOSCR by a method wherein a rectangular cathode side emitter layers are provided radially in either face of a circular semiconductor substrate, an anode side emitter layer is provided in the projecting portion to the back face side, while an auxiliary emitter layer or the insulated substances are provided in the remainding portion to form an inert condition of the semiconductor, and further the other portions are short- circuited. CONSTITUTION:Since an auxiliary anode side emitter layer 21 is spaced apart from a cathode side emitter layer 5 not to oppose against it, the carrier injected from the layer 5 can not reach the front of the layer 21 and the p-n junction provided therein can not be biased over a voltage stored, the layer 21 does not almost perform the implantation of the carrier into a first base layer 3 and therefore it is equivalent to the insulated substance. Therefore, the electrically active region is defined to the central portion along III-III, IV-IV sections and the surrounding portions have the structure the same as in the regions A, B, and consequently the junction region can be formed uniformly substantially in the longitudinal direction of rectangular unit GTO element. As a result, the electrical property for the unit GTO element becomes uniform and the switching break-down would scarcely occur. |
