Plasma deposition of amorphous materials.

摘要

improved method for the generation of and deposition of semiconductor alloys from a plasma are disclosed. The uniformity of deposited layers of amorphous semiconductor material is enhanced by maintaining the frequency of an ionizing a.c. field in the plasma region between the cathode of a glow discharge chamber and the active surface of a substrate at about 50 to 200 kiloHertz to allow the favorable deposition of material at relatively low power. Improved sample quality and . deposition control (including uniformity) is realized at even high frequencies by the introduction of a quantity of inert gas, as diluent, into the chamber to alter the energy profile of the plasma.