| 发明名称 |
Photodetector sensitive in the near infrared range. |
| 摘要 |
<p>1. Photodetector having its maximum sensivity in the neighbourhood of 1.3 mu m, comprising a P type substrate of Hg1-x Cdx Te, and a doped N-type zone formed on the substrate, the resulting junction being of the P-N type, characterized in that x has a value substantially equal to 0.67.</p> |
| 申请公布号 |
EP0060743(A1) |
申请公布日期 |
1982.09.22 |
| 申请号 |
EP19820400309 |
申请日期 |
1982.02.22 |
| 申请人 |
SOCIETE ANONYME DE TELECOMMUNICATIONS |
发明人 |
PICHARD, GUY;ROYER, MICHEL |
| 分类号 |
G01J1/02;H01L31/0296;H01L31/103;(IPC1-7):01L31/10 |
主分类号 |
G01J1/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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