| 摘要 |
PURPOSE:To grow a required epitaxial layer in a V shaped groove with fine reproductivity by slowing down super cooling speed and cooling speed of material melting liquid. CONSTITUTION:A V shaped groove 4 is formed with it tip reaching an n type InP substrate 1 penetrating a p type InP layer 2 by treating an InP substrate 3 of 100 face azimuth with different azimuth etching liquid. The direction in which the groove 4 is formed is either azimuth 00 or 011 according to etching liquid. Then an n type InP layers 5, 5' are grown respectively in the groove 4 and on the surface of the substrate 3 by bringing these in contact with InP melting liquid with its saturation temperature less than 10 deg.C at the speed less than 0.2 deg.C/min. to perform liquid phase epitaxial growth. Then n type Ga As P layers 6, 6', a p type InP layer 7, and a p type In Ga As P layer 8 are grown on the surface of the substrate 3. A required epitaxial layer is thus formed with fine reproductivity. |
