| 摘要 |
PURPOSE:To obtain an IC device having a stable property by a method wherein a sputtering of metal of high melting point like Mo, W or the like is provided for the surface of substrate while mixing PH3 in inert gas. CONSTITUTION:A P+ layer 11 is formed on P type Si substrate 10, a field oxide film 13 is stacked over the layer 11 and a gate oxide film 13 is formed, thereafter a sputtering of Mo is provided at 5:1 in flow rate of PH3, 10m Torr in pressure, 3KW in power to form a film of 3,000Angstrom substantially and Mo gate electrode 14 is formed. According to such a processing, P equivalent to 10<21>/cm<3> is contained in the electrode 14, P forms PSG131 of very thin thickness on the gate oxide film immediately under the electrode 14 by a high heat treatment after forming. Since the PSG film 131 serves to fix a movable ion like Na<+>, the transistor has a very stable property. Thereafter, n<+> type source-drain 141 are formed by As ion implantation, they have been processed at 1,000 deg.C in non- oxidized gas, thereafter they are covered with PSG15, to provide an opening 16 and Al electrode 17 is added to manufacture the transistor. |
