| 摘要 |
PURPOSE:To suppress the leakage current between neighboring groove-shaped capacitors, by uniformly forming shallow N-type diffused layers on both inner wall parts and both bottom parts of the first groove part and the second groove part. CONSTITUTION:A field oxide film 5 is formed on a part of a P<-> layer 2, which is formed on a P-type semiconductor substrate 1. Then a first groove part 3 and a second groove part 4 are formed at the neighboring positions. Thereafter a silanol solution, in which high concentration arsenic is included and ethanol is a main solvent, is dropped and applied on the entire surface. Thereafter, the substrate is turned. Then, heat treatment is performed, and both inner wall parts and both bottom parts of the first groove part 3 and the second groove part 4 are covered with oxide films including high concentration arsenic. Thereafter, arsenic ions are implanted only in both inner wall parts of the first groove part 3 and the second groove part 4. Then heat treatment is performed in a mixed gas atmosphere of nitrogen and oxygen. The arsenic is diffused into both bottom parts of the grooves from the oxide films 14. Thus shallow N-type diffused layers 9 having the uniform diffusion depth are formed. |
