发明名称 Method for etching semiconductor wafers on one side
摘要 Etching a semiconductor wafer on one side by suspending the wafer on a rotating gas cushion with the wafer surface not to be etched facing the gas cushion with the other wafer surface exposed for etching. The exposed surface is sprayed with etchant and centrifuged at the same time. Subsequently, the etched surface is sprayed with rinsing agent and then centrifuged dry.
申请公布号 US4350562(A) 申请公布日期 1982.09.21
申请号 US19810274883 申请日期 1981.06.18
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 BONUE, BONUE
分类号 H01L21/306;(IPC1-7):H01L21/30 主分类号 H01L21/306
代理机构 代理人
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