发明名称 |
Method for etching semiconductor wafers on one side |
摘要 |
Etching a semiconductor wafer on one side by suspending the wafer on a rotating gas cushion with the wafer surface not to be etched facing the gas cushion with the other wafer surface exposed for etching. The exposed surface is sprayed with etchant and centrifuged at the same time. Subsequently, the etched surface is sprayed with rinsing agent and then centrifuged dry.
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申请公布号 |
US4350562(A) |
申请公布日期 |
1982.09.21 |
申请号 |
US19810274883 |
申请日期 |
1981.06.18 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
BONUE, BONUE |
分类号 |
H01L21/306;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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