发明名称 GATE DRIVING CIRCUIT FOR SEMICONDUCTOR
摘要 PURPOSE:To enhance the switching speed of a MOSFET, by feeding back positively a voltage, which is generated between both ends of a load of the MOSFET, to the gate of the MOSFET. CONSTITUTION:When the output level of an inverter 4 is low, a transistor TR9 is turned off, and a high level is applied to the gate of a MOSFET3, and a floating capacity 11 is charged. When the FET3 starts turning on, a voltage is generated between both ends of a load 2 and is fed back positively to the gate of the FET3 through a transformer 8. Consequently, the FET8 is turned on in a high speed. When the output level of the inverter 4 is inverted, the TR9 is turned on, and the floating capacity 11 is discharged, and the voltage between both ends of the load 2 is fed back positively to the gate of the FET3, and the capacity 11 is discharged more rapidly. Sonsequently, the FET3 is turned off in a high speed.
申请公布号 JPS57152729(A) 申请公布日期 1982.09.21
申请号 JP19810037935 申请日期 1981.03.18
申请人 HITACHI SEISAKUSHO KK 发明人 ONDA KENICHI;ABE KIMIHITO;AMANO HISAO
分类号 H02M1/08;H03K17/04;H03K17/567;H03K17/687;H03K17/695 主分类号 H02M1/08
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