发明名称 Input stage for a monolithically integrated charge transfer device which generates two complementary charge packets
摘要 An input stage for a monolithically integrated charge transfer device of the type which generates two complementary charge packets from one input signal, said input stage having at least two transfer gates disposed between a source region in a semiconductor body and an input gate which is charged with the input signal. The two transfer gates in the input stage are connected to clock pulse voltages which operate at one half the clock frequency of the transfer stages covering the transfer channel of the charge transfer device. A particularly low-noise encoding of the input signal into the two complementary charge packets results thereby and the structure is particularly suitable for analog signal processing.
申请公布号 US4350902(A) 申请公布日期 1982.09.21
申请号 US19800165249 申请日期 1980.07.02
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 KNAUER, KARL
分类号 H01L29/762;G11C19/28;H01L21/339;H01L29/768;(IPC1-7):G11C19/28;H01L29/78 主分类号 H01L29/762
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