发明名称 |
Discharge device and method for use in processing semiconductor devices |
摘要 |
An electrical discharge is applied to a wafer mounted in a wafer holder. The wafer includes at least one conducting region covered by an insulating layer. The discharge causes a conductive channel from the conductive region through the insulating layer. The conductive channel provides a relatively low impedance path suitable for conducting away electrons which are injected into the region during processing steps such as electron beam exposure.
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申请公布号 |
US4350866(A) |
申请公布日期 |
1982.09.21 |
申请号 |
US19790098523 |
申请日期 |
1979.11.29 |
申请人 |
FUJITSU LIMITED |
发明人 |
ZASIO, JOHN J.;SAMUELS, MICHAEL W. |
分类号 |
H01L21/027;H01L21/768;(IPC1-7):B23K15/00;B23P1/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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