发明名称 Discharge device and method for use in processing semiconductor devices
摘要 An electrical discharge is applied to a wafer mounted in a wafer holder. The wafer includes at least one conducting region covered by an insulating layer. The discharge causes a conductive channel from the conductive region through the insulating layer. The conductive channel provides a relatively low impedance path suitable for conducting away electrons which are injected into the region during processing steps such as electron beam exposure.
申请公布号 US4350866(A) 申请公布日期 1982.09.21
申请号 US19790098523 申请日期 1979.11.29
申请人 FUJITSU LIMITED 发明人 ZASIO, JOHN J.;SAMUELS, MICHAEL W.
分类号 H01L21/027;H01L21/768;(IPC1-7):B23K15/00;B23P1/00 主分类号 H01L21/027
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