Method of etching metallic materials including a major percentage of chromium

摘要

A method of etching a desired pattern in a thin film of chromium deposited on a substrate is described. A layer of a masking material which is etch-resistant is formed on the film of chromium and provided with the desired pattern. Portions of the thin film of chromium uncovered by the patterned layer of etch-resistant material are covered with a thin layer of aluminum having a multiplicity of holes. The substrate including the layer of aluminum in contact with thin film of chromium is immersed in a dilute hydrochloric acid solution whereby the layer of aluminum and the portion of the thin film of chromium in contact therewith are dissolved thereby providing the desired pattern in the thin film of chromium.