发明名称 Cathode for etching
摘要 A cathode for reactive ion etching is provided which improves the etch rate and the uniformity of etching on the object etched. The cathode has a quartz plate with a series of recesses having disks therein of the same material as the object to be etched and a ring of that same material around the outer edge of the plate. In a preferred embodiment a cathode for etching silicon wafers has silicon disks recessed in a quartz plate at each wafer holding position and a ring of silicon around the outer edge of the plate.
申请公布号 US4350578(A) 申请公布日期 1982.09.21
申请号 US19810262020 申请日期 1981.05.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FRIESER, RUDOLF G.;MA, WILLIAM H.;OZOLS, GUNARS M.;ZINGERMAN, BRYANT N.
分类号 C23F4/00;H01J37/34;H01L21/302;H01L21/3065;(IPC1-7):C23C15/00 主分类号 C23F4/00
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