A cathode for reactive ion etching is provided which improves the etch rate and the uniformity of etching on the object etched. The cathode has a quartz plate with a series of recesses having disks therein of the same material as the object to be etched and a ring of that same material around the outer edge of the plate. In a preferred embodiment a cathode for etching silicon wafers has silicon disks recessed in a quartz plate at each wafer holding position and a ring of silicon around the outer edge of the plate.
申请公布号
US4350578(A)
申请公布日期
1982.09.21
申请号
US19810262020
申请日期
1981.05.11
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
FRIESER, RUDOLF G.;MA, WILLIAM H.;OZOLS, GUNARS M.;ZINGERMAN, BRYANT N.