| 摘要 |
PURPOSE:To obtain a semiconductor magneto-electric effect device composed of a vapor plated thin InSb film with its Hall constant temperature coefficient and electric conductivity temperature coefficient smaller at normal temperatures by improving the InSb thin film heat treatment process. CONSTITUTION:An InSb thin film is vapor plated on a substrate and the film is subjected in an Ar atmosphere to a short period heating at a temperature slightly lower than the InSb melting point, exemplifiedly at 510 deg.C. This is immediately followed by a cooling process with a temperature lapse rate of 90 deg.C/min. These processes change the InSb thin film crystalline structure and composition, and the type of conductivity thereof, so that a semiconductor magneto-electric effect device is obtained wherein the Hall constant temperature coefficient and conductivity temperature coefficient are smaller at normal temperatures and the ratio of In to the entire thin film structure is not lower than 58atom%. The white dots in the figure indicate pre-heat treatment properties and the black dots post-heat treatment properties. |
