| 摘要 |
PURPOSE:To reduce quantity of side etching and to obtain the forming method of a pattern having favorable precision of process by a method wherein side etching parts generated theretofore are covered with a softened photo resist in the middle of etching process. CONSTITUTION:At the progress of work to make a metal 13 for electrode wiring to form the pattern, the etching process thereof is performed dividing the process into two times. Namely, nearly the half of thickness of the metal film is etched by the first time etching process (figure a). Then the heat treatment is performed, but the treatment thereof is performed at the temperature higher than the softening point of the photo resist film 14, and accordingly the phot resist film 14 is made to be softened to cover the side etching parts 15 of the metal 13 for electrode wiring generated by the first time etching process (figure b). The second time etching process is performed in this condition, and the metal 13 for electrode wiring is patternized (figure c). |
