| 摘要 |
PURPOSE:To decrease the number of liquid phase growth processes in the manufacture of a multiple wave length integrated semiconductor light emitting device by a method wherein a stepped ladder part is formed wherein each step is a semiconductor layer with a different inhibiting band width and each step is provided with a stripe shaped oscillating part. CONSTITUTION:On an N type InP substrate 1, after the formation of an N type InP buffer layer 2, an InGaAsP 1st active layer (lambda=1.2mum), N type InP layer, InGaAsP 2nd active layer (lambda=1.3mum), N type InP layer, InGaAsP 3rd active layer (lambda=1.55mum) are laid in succession. The active layers are formed into a ladder wherein each of them is partially exposed. Every component of the ladder is provided with a stripe shaped ridge and then a P type InP current stopping layer 5, N type InP current confining layer 6, P type InP imbedded layer 7, and N type InGaAsP electrode forming layer 8 are grown. This results in a decrease in the number of liquid phase growth processes in the manufacturing of a multiple wave length light emitting device. |
