| 摘要 |
PURPOSE:To obtain economically and easily a photoconductive member with superior photoconductive and electric characteristics by introducing >=2 kinds of specified Si compounds contg. halogen as gaseous starting material when a photoconductive layer is formed on a support. CONSTITUTION:Starting material for forming a photoconductive layer is composed of >=2 kinds of compounds represented by SimHlXk (where l+k=2m+2, l is 0 or an integer, and X is halogen), e.g., SiCl4, Si2F6 and Si2Cl6. The compounds are mixed so as to adjust the percentage of the compound of higher order of (m) such as Si2F6 to the compound of the lowest order of (m) such as SiCl4 to >=1vol%, and the mixture is introduced into a deposition chamber in the gaseous state. Glow discharge, arc discharge or other discharge is then caused in the mixed gaseous atmosphere to form a photoconductive layer on a support. |
