| 摘要 |
PURPOSE:To obtain a Ge IC by a method wherein a resist film or an oxide film formed by the CVD method is used as the mask for diffusion at a germanium substrate, impurities are implanted according to the ion implantation method using the diffusion mask thereof, and annealing is performed to form a diffusion layer. CONSTITUTION:Buried layers 3, 4 are formed in the Ge substrate 1, and epitaxial layers 5 are made to grow to form an isolation region 7. Opening parts are provided in a silicon dioxide film 8 adhered on the whole surface, the resist film 9 is applied thereon, an opening part is provided at the part corresponding to the diffusion region 10, and a P type base diffusion layer 10 is formed by ion implantation. Accordingly the IC can be formed in the Ge substrate, and the IC to be operated by an electric power source of about 0.5-15V can be obtained easily. |
