MANUFACTURE OF COMPOUND SEMICONDUCTOR FILM

摘要

PURPOSE:To improve the crystallizability of a IIb-VIb compound semiconductor film having a high impurity-doped concentration by using a alkyl halide or the like as well as a compound containing group VIIb elements for impurity doping. CONSTITUTION:A compound semiconductor film is obtained as an iodine- containing ZnSe single crystal film which is grown at a velocity of 2 mum per one hour by a method wherein raw gas, which is obtainable after 25 cc/min of hydrogen gas made to pass through a diethyl zinc bubbler container 5 of a temperature 5 deg.C and 2 cc/min of hydrogen gas made to pass through an ethyl iodide bubbler container 7 at a temperature of 3 deg.C are mixed and diluted with 1l/min of hydrogen gas, and raw gas corresponding to 100 cc/min of 5 volume % of hydrogen selenide gas diluted with hydrogen gas are led into a reaction container 1 using a device for forming single crystal, and the raw gasses are sprayed on a GaAs substrate 3 heated to a temperature of 400 deg.C. A good mirror surface is formed on the surface of the obtained ZnSe single crystal line film and the crystallizability thereof is also improved.