| 摘要 |
PURPOSE:To bond the semiconductor pellet and the surface of a substrate in high reliability by contacting the surface of the semiconductor pellet metalized with the surface of the substrate plated with solder or Sn and pressing and rubbing the surface of the semiconductor pellet. CONSTITUTION:The Si pellet 1 on which the three layers of Ti7-Cu8-Su9 are metalized is contacted with the surface of a Pb-Sn solder layer 12 stacked on the Ni plated film 10 containing Pb of a lead frame 5 made of a 42 alloy (42% is Ni and the remainder Fe and its thermal expansion coefficient is close to that of Si), and properly pressed and rubbed. In this case, excessive Pb-Sn solder, the oxide of solder and the surface of Cu and voids are extruded from the end section of the pellet 1, and the Cu.Sn alloy of a junction layer at the pellet side and the Ni.Sn alloy of a junction layer at the lead frame side are bonded, and strongly bonded positively by Ni-Sn-Cu 13 having the high melting point. |
